Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates |
| |
Authors: | S A Kukushkin A V Osipov V N Bessolov E V Konenkova V N Panteleev |
| |
Institution: | 1.Institute of Problems of Mechanical Engineering,Russian Academy of Sciences,St. Petersburg,Russia;2.Peter the Great St.-Petersburg Polytechnic University,St. Petersburg,Russia;3.National Research University of Information Technologies, Mechanics and Optics,St. Petersburg,Russia;4.Ioffe Institute,Russian Academy of Sciences,St. Petersburg,Russia |
| |
Abstract: | The effect of changing the misfit dislocation propagation direction during GaN layer growth on the AlN/SiC/Si(111) structure surface is detected. The effect is as follows. As the GaN layer growing on AlN/SiC/Si(111) reaches a certain thickness of ~300 nm, misfit dislocations initially along the layer growth axis stop and begin to move in the direction perpendicular to the growth axis. A theoretical model of AlN and GaN nucleation on the (111) SiC/Si face, explaining the effect of changing the misfit dislocation motion direction, is constructed. The effect of changing the nucleation mechanism from the island one for AlN on SiC/Si(111) to the layer one for the GaN layer on AlN/SiC/Si is experimentally detected and theoretically explained. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|