Competition between band and hopping carrier transport in Ge : Mn thin films |
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| Authors: | A I Dmitriev L I Buravov |
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| Institution: | 1.Institute for Problems of Chemical Physics,Russian Academy of Sciences,Moscow oblast, Chernogolovka,Russia |
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| Abstract: | Regularities of hole transport and its correlation with percolation magnetism caused by localized carriers simultaneously involved in the formation of the magnetic and electrical properties of Ge: Mn thin films are investigated. It is established that at temperatures of T > 22 K the activationless band carrier transport occurs in the Ge: Mn samples (2 at % Mn). At low temperatures, the hopping mechanism with a variable hopping length works. |
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