Hydrogen removal by annealing from C-doped InGaAs grown on InP by metalorganic chemical vapor deposition

Hydrogen removal from C-doped InGaAs grown on InP substrate by metalorganic chemical vapor deposition is discussed based on the dependence of hole concentration on various annealing conditions. It is revealed that the hydrogen removal rate becomes higher as the annealing temperature is higher and the activation energy of hydrogen removal is about 1.9 eV regardless of C-doped layer thickness. The hydrogen removal rate is also found to be inversely proportional to C-doped layer thickness, suggesting that the hydrogen removal reaction is mainly governed by hydrogen diffusion.