Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier |
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| Institution: | a Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;b Guangdong General Research Institute for Industrial Technology, Guangzhou 510650, China |
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| Abstract: | In this study,the efficiency droop of an InGaN light-emitting diode(LED)is reduced significantly by using a pAlGaN/GaN superlattice last quantum barrier.The reduction in efficiency droop is mainly caused by the decrease of electron current leakage and the increase of hole injection efficiency,which is revealed by investigating the light currents,internal quantum efficiencies,energy band diagrams,carrier concentrations,carrier current densities,and radiative recombination efficiencies of three LED structures with the advanced physical model of semiconductor device(APSYS). |
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| Keywords: | light-emitting diodes p-AlGaN/GaN superlattice last quantum barrier efficiency droop |
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