In situ electronic structural study of VO_2 thin film across the metal–insulator transition |
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引用本文: | 伊明江·买买提,阿布都艾则孜·阿布来提,吴蕊,王嘉鸥,钱海杰,奎热西·依布拉欣.In situ electronic structural study of VO_2 thin film across the metal–insulator transition[J].中国物理 B,2013(12):410-415. |
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作者姓名: | 伊明江·买买提 阿布都艾则孜·阿布来提 吴蕊 王嘉鸥 钱海杰 奎热西·依布拉欣 |
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基金项目: | Project supported by the Natural Science Foundation of the Chinese Academy of Sciences(Grant No.H91G750Y21) |
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摘 要: | The in situ valence band photoemission spectrum (PES) and X-ray absorption spectrum (XAS) at V LⅡ-LⅢ edges of the VO2 thin film, which is prepared by pulsed laser deposition, are measured across the metal–insulator transition (MIT) temperature (TMIT=67 ℃). The spectra show evidence for changes in the electronic structure depending on temperature. Across the TMIT, pure V 3d characteristic d‖ and O 2p-V 3d hybridization characteristic πpd, σpd bands vary in binding energy position and density of state distributions. The XAS reveals a temperature-dependent reversible energy shift at the V LⅢ-edge. The PES and XAS results imply a synergetic energy position shift of occupied valence bands and unoccupied conduction band states across the phase transition. A joint inspection of the PES and XAS results shows that the MIT is not a one-step process, instead it is a process in which a semiconductor phase appears as an intermediate state. The final metallic phase from insulating state is reached through insulator–semiconductor, semiconductor–metal processes, and vice versa. The conventional MIT at around the TMIT=67 ℃ is actually a semiconductor–insulator transformation point.
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关 键 词: | VO2薄膜 电子结构 金属量 原位 麻省理工学院 脉冲激光沉积 吸收光谱 三维特征 |
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