Low voltage program-erasable Pd-Al_2O_3-Si capacitors with Ru nanocrystals for nonvolatile memory application |
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Affiliation: | State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China |
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Abstract: | Pd-Al2O3-Si capacitors with Ru nanocrystals are fabricated and electrically characterized for nonvolatile memory application. While keeping the entire insulator Al2O3 thickness fixed, the memory window has a strong dependence on the tunneling layer thickness under low operating voltages, whereas it has weak dependence under high operating voltages. As for the optimal configuration comprised of 6-nm tunneling layer and 22-nm blocking layer, the resulting memory window increases from 1.5 V to 5.3 V with bias pulse increasing from 10-5 s to 10-2 s under ±7 V. A ten-year memory window as large as 5.2 V is extrapolated at room temperature after ±8 V/1 ms programming/erasing pulses. |
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Keywords: | metal-oxide-semiconductor capacitors nonvolatile memory Ru nanocrystals atomic-layer-deposition |
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