The effect of hydrogen as an additive in reactive ion etching of GaAs for obtaining polished surface |
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| Authors: | FN Dultsev LA Nenasheva |
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| Institution: | Russian Academy of Sciences, Institute of Semiconductor Physics SB RAS, Lavrentyev av., 13, 630090 Novosibirsk, Russia |
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| Abstract: | The effect of hydrogen on the reactive ion etching (RIE) of GaAs in the CF2Cl2 plasma is discussed. The addition of hydrogen into the reaction mixture improves the sharpness of etch borders; the etched surface is smooth for etching depth > 1 μm, etching rate is time-constant. |
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| Keywords: | Reactive ion etching Gallium arsenide Hydrogen Surface roughness |
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