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Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study |
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| Authors: | V Slugeň L Harmatha P Ballo J Šik V Kršjak |
| Institution: | a Department of Nuclear Physics and Technology, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology (STU), Ilkovi?ova 3, 812 19 Bratislava, Slovak Republic b Department of Microelectronics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology (STU), Ilkovi?ova 3, 812 19 Bratislava, Slovak Republic c Department of Physics, Faculty of Electrical Engineering and Information Technology, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology (STU), Ilkovi?ova 3, 812 19 Bratislava, Slovak Republic d Institute of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04 Bratislava, Slovak Republic e ON Semiconductor CR, 1 máje 2230, 756 61 Ro?nov pod Radhoštěm, Czech Republic f Institut für Nukleare Festkörperphysik, Universität der Bundeswehr München, 85577 Neubiberg, Germany |
| Abstract: | Measurements of interface trap density, effective generation lifetime (GL) and effective surface generation velocity have been performed using different methods on selected MOS structures prepared on nitrogen-doped Czochralski-grown (NCz) silicon. The application of the positron annihilation technique using a pulsed low energy positron system (PLEPS) focused on the detection of nitrogen-related defects in NCz silicon in the near surface region. In the case of p-type Cz silicon, all the results could be used for the testing of homogeneity. In n-type Cz silicon, positron annihilation was found insensitive to nitrogen doping. |
| Keywords: | Czochralski-grown silicon Nitrogen doping Positron annihilation Slow positron beam MOS structure Generation lifetime |
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