Study of silicon-organic interfaces by admittance spectroscopy |
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Authors: | Samares Kar |
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Affiliation: | Department of Electrical Engineering, Indian Institute of Technology, Kanpur-208016, India |
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Abstract: | An admittance spectroscopy technique has been developed for the interfaces between organic monolayers and silicon. The present work involves the development of an effective equivalent circuit to represent the silicon/organic-monolayer system, and the development of a parameter extraction procedure, which yields the monolayer capacitance and the monolayer thickness, the flat-band voltage, the silicon doping density, the silicon surface potential, the interface trap density, the interface trap capture cross-section and the interface trap energy. This technique was applied to three types of silicon/organic-monolayer system. |
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Keywords: | Organic monolayers Silicon-organic interface Admittance spectroscopy Self-assembly |
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