Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells |
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Authors: | Q Sun JC Zhang J Chen H Wang YT Wang H Yang LP Guo |
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Institution: | a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, CAS, Beijing 100083, China b Department of Physics, Wuhan University, Wuhan 430072, China c Laboratory of Nuclear Analytical Techniques, Institute of High energy Physics, CAS, Beijing 100039, China d Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, CAS, Beijing 100039, China |
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Abstract: | Both cracked and crack-free GaN/Al0.55Ga0.45N multiple quantum wells (MQWs) grown on GaN template by metalorganic chemical vapor deposition have been studied by triple-axis X-ray diffraction, grazing-incidence X-ray reflectivity, atomic force microscope, photoluminescence spectroscopy and low-energy positron annihilation spectroscopy. The experimental results show that cracks generation not only deteriorates the surface morphology, but also leads to a period dispersion and roughens the interfaces of MQWs. The mean density of dislocations in MQWs, determined from the average full-width at half-maximum of ω-scan of each satellite peak, has been significantly enhanced by the cracks generation. Furthermore, the measurement of annihilation-line Doppler broadening reveals a higher concentration of negatively charged vacancies in the cracked MQWs. The combination of these vacancies and the high density of edge dislocations are assumed to contribute to the highly enhanced yellow luminescence in the cracked sample. |
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Keywords: | Nitrides Multiple quantum wells Cracks Dislocations Vacancies X-ray diffraction |
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