Surface electronic structure of the (3 × 2) reconstruction induced by Yb on a Si(1 1 1) surface |
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Authors: | Shinya Takada Keisuke Kobayashi Ayumi Harasawa Toyohiko Kinoshita |
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Affiliation: | a Department of Physics, Tohoku University, Sendai 980-8578, Japan b Institute for Solid State Physics, The University of Tokyo, Kashiwa 277-8581, Japan |
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Abstract: | We have investigated the electronic structure of the Yb/Si(1 1 1)-(3 × 2) surface using angle-resolved photoelectron spectroscopy. Five surface states have been identified in the gap of the bulk band projection. Among these five surface state, the dispersions of three of them agree well with those of the surface states of monovalent atom adsorbed Si(1 1 1)-(3 × 1) surfaces. The dispersions of the two other surface states agree well with those observed on the Ca/Si(1 1 1)-(3 × 2) surface, whose basic structure is the same as that of monovalent atom adsorbed Si(1 1 1)-(3 × 1) surfaces. Taking these results into account, we conclude that the five surface states observed in the band gap originate from the orbitals of Si atoms that form a honeycomb-chain-channel structure. |
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Keywords: | 73.20.At 79.60.&minus i 61.14.Hg 68.35.&minus p |
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