Morphological characteristics of amorphous Ge2Sb2Te5 films after a single femtosecond laser pulse irradiation |
| |
| Authors: | Guangjun Zhang Donghong Gu Qingxi Chen |
| |
| Institution: | a Laboratory for High Density Optical Storage, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai 201800, People's Republic of China
b Photon Craft Project, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai 201800, People's Republic of China |
| |
| Abstract: | The morphology of materials resulting from laser irradiation of the single-layer and the multilayer amorphous Ge2Sb2Te5 films using 120 fs pulses at 800 nm was observed using scanning electron microscopy and atomic force microscopy. For the single-layer film, the center of the irradiated spot is depression and the border is protrusion, however, for the multilayer film, the center morphology changes from a depression to a protrusion as the increase of the energy. The crystallization threshold fluence of the single-layer and the multilayer film is 22 and 23 mJ/cm2, respectively. |
| |
| Keywords: | 79 20 D 78 55 Q 68 37 E 68 37 P |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
