Study of the structure and electrical properties of the copper nitride thin films deposited by pulsed laser deposition |
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Authors: | C. Gallardo-Vega W. de la Cruz |
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Affiliation: | a Centro de Investigación Científica y de Educación Superior de Ensenada (CICESE), Km. 107 Carretera Tijuana-Ensenada, A. Postal 2732, 22860, Ensenada B.C., Mexico b Centro de Ciencias de la Materia Condensada, UNAM, Km. 107 Carretera Tijuana-Ensenada, A. Postal 2681, 22860, Ensenada B.C., Mexico |
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Abstract: | Copper nitride thin films were prepared on glass and silicon substrates by ablating a copper target at different pressure of nitrogen. The films were characterized in situ by X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and ex situ by X-ray diffraction (XRD). The nitrogen content in the samples, x = [N]/[Cu], changed between 0 and 0.33 for a corresponding variation in nitrogen pressure of 9 × 10−2 to 1.3 × 10−1 Torr. Using this methodology, it is possible to achieve sub-, over- and stoichiometric films by controlling the nitrogen pressure. The XPS results show that is possible to obtain copper nitride with x = 0.33 (Cu3N) and x = 0.25 (Cu4N) when the nitrogen pressure is 1.3 × 10−1 and 5 × 10−2 Torr, respectively. The lattice constants obtained from XRD results for copper nitride with x = 0.25 is of 3.850 Å and with x = 0.33 have values between 3.810 and 3.830 Å. The electrical properties of the films were studied as a function of the lattice constant. These results show that the electrical resistivity increases when the lattice parameter is decreasing. The electrical resistivity of copper nitride with x = 0.25 was smaller than samples with x = 0.33. |
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Keywords: | Copper nitride Thin films Characterization methods Pulsed laser deposition |
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