Self-assembled monolayer growth on chemically modified polymer surfaces |
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Authors: | S. Pimanpang Pei-I. Wang G.-C. Wang T.-M. Lu |
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Affiliation: | Department of Physics, Applied Physics, and Astronomy, and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180-3590, USA |
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Abstract: | We report a study of the self-assembled monolayer (SAM) growth of bis[3(triethoxysilane)propyl]tetrasulfide (Tetrasulfide) on low dielectric constant (low-k) aromatic hydrocarbon SiLK whose surface chemistry was modified using sulfuric acid, He plasma treatment, and N2 plasma treatment. X-ray photoelectron spectroscopy (XPS) spectra show that there is no detectable growth of Tetrasulfide SAM on untreated SiLK surfaces. After the SiLK surfaces have been treated with sulfuric acid, He plasma, or N2 plasma, the original chemically inert polymer surfaces are functionalized with polar groups resulting in a significant improvement of their wettability, which is confirmed by their reduction of water droplet contact angles. The introduction of polar functional groups thus facilitates the formation of Tetrasulfide SAM on the polymer surfaces. Atomic force microscopy (AFM) analysis shows an insignificant change in the surface morphology after the growth of Tetrasulfide SAM on the chemically modified SiLK surfaces. Quantitative XPS analysis also showed that Tetrasulfide SAM growth is more prominent on He and N2 plasma treated surfaces than those treated by sulfuric acid. |
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Keywords: | SiLK Self-assembled monolayer Plasma treatment AFM XPS Contact angle |
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