SHI induced silicide formation and surface morphology at Co/Si system |
| |
Authors: | Garima Agarwal |
| |
Institution: | Material Science Laboratory, Centre for Non-Conventional Energy Resources, 14-Vigyan Bhawan, University of Rajasthan, Jaipur 302004, India |
| |
Abstract: | Ion beam mixing is a useful technique to produce modifications at the surface and interface of the solid material. In the present work, ion beam induced modifications at Co/Si interface using 120 MeV Au-ion irradiation has been studied at ion fluences in the range of 1012 to 1014 ions/cm2 by secondary ion mass spectroscopy (SIMS) technique and calculated mixing efficiency at the interface. Silicide formation has been discussed on the basis of swift heavy ion (SHI) irradiation induced effects. Surface morphology and roughness of irradiated system with fluence 5 × 1013 and 1 × 1014 ions/cm2 is studied by scanning tunneling microscopy (STM). Roughness of the surface shows marks of melting process and confirms the appearance of some pinholes in the reacted Co/Si system. Comparative study was also undertaken on annealed sample at 300 °C and then irradiated at a dose 1 × 1014 ions/cm2. |
| |
Keywords: | Ion beam mixing Surface Interface Silicide Ion irradiation |
本文献已被 ScienceDirect 等数据库收录! |
|