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Y2O3 stabilized ZrO2 thin films deposited by electron beam evaporation: Structural, morphological characterization and laser induced damage threshold |
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| Authors: | Shi Gang Wu Hong Ying Zhang Zhi Lin Xia Jian Da Shao |
| Institution: | a Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China b Graduate School, Chinese Academy of Sciences, Beijing 100080, China c School of Materials Science and Engineering, Shandong University of Technology, Zibo 255049, China |
| Abstract: | Four kinds of Y2O3 stabilized ZrO2 (YSZ) thin films with different Y2O3 content have been prepared on BK7 substrates by electron-beam evaporation method. Structural properties and surface morphology of thin films were investigated by X-ray diffraction (XRD) spectra and scanning probe microscope. Laser induced damage threshold (LIDT) was determined. It was found that crystalline phase and microstructure of YSZ thin films was dependent on Y2O3 molar content. YSZ thin films changed from monoclinic phase to high temperature phase (tetragonal and cubic) with the increase of Y2O3 content. The LIDT of stabilized thin film is more than that of unstabilized thin films. The reason is that ZrO2 material undergoes phase transition during the course of e-beam evaporation resulting in more numbers of defects compared to that of YSZ thin films. These defects act as absorptive center and the original breakdown points. |
| Keywords: | 79 20 Ds 68 37 Ps 68 37 Yz 68 55 Jk |
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