The influence of H2 plasma treatment on the field emission of amorphous GaN film |
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| Authors: | F Ye HG Duan H Li XJ Pan |
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| Institution: | Institute of Electronic Materials, School of Physical Science and Technology, Lanzhou University, Lanzhou, China |
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| Abstract: | The influence of H2 plasma treatment on the field emission properties of amorphous GaN (a-GaN) films is studied. It is found that the treatment makes little change to the surface morphology. The current density of the treated film decreases from 400 to 30 μA/cm2 at the applied field of about 30 V/μm. The treatment can reduce the defects in a-GaN films, and therefore the treatment results in the weakening of the tunneling emission of the a-GaN film at the high field region. The treatment also seems to change the conduction mechanism of the a-GaN film. |
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| Keywords: | 79 70 +q 73 20 Hb |
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