Wear-out of Al-Ta2O5/SiO2-Si structures under dynamic stress |
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| Authors: | N Novkovski E Atanassova |
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| Institution: | a Institute of Physics, Faculty of Natural Sciences and Mathematics, Gazibaba b.b., P.O. Box 162, 1000 Skopje, Macedonia
b Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria |
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| Abstract: | Wear-out of Al-Ta2O5/SiO2-Si stacked layers under dynamic current stresses was studied. It was found that a detrapping of negative charges occurs between the pulses, similarly to SiO2 and SiOxNy films. Additional consumption of the SiO2 interfacial layer results in a decrease of the gate voltage in some stages of the stress, depending upon the stress time and current density. |
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| Keywords: | ac stress High-k dielectric Charge trap Metal gate |
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