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XPS, electric and photoluminescence-based analysis of the GaAs (1 0 0) nitridation |
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| Authors: | Z. Benamara B. Bachir Bouiadjra B. Gruzza M. Miczek |
| Affiliation: | a Laboratoire de Microélectronique Appliquée, Université de Sidi Bel abbès, 22000 Sidi Bel Abbès, Algérie b LASMEA, UMR 6602 CNRS, Blaise Pascal University, Campus scientifique des Cézeaux, 63177 Aubiere Cedex, France c Department of Microelectronics, Institute of Physics, Silesian University of Technology, Krzywoustego 2, 44-100 Gliwice, Poland |
| Abstract: | In this paper, nitridation process of GaAs (1 0 0) substrates was studied in-situ using X-ray photoelectron spectroscopy (XPS) and ex-situ by means of electrical method I-V and photoluminescence surface state spectroscopy (PLS3) in order to determine chemical, electrical and electronic properties of the elaborated GaN/GaAs interfaces.The elaborated structures were characterised by I-V analysis. The saturation current IS, the ideality factor n, the barrier height ΦBn and the serial resistance RS are determined.The elaborated GaN/GaAs structures are also exhibited a high PL intensity at room temperature. From the computer-aided analysis of the power-dependent PL efficiency measurements (PLS3 technique), the value of the interface state density NSS(E) close to the mid-gap was estimated to be in the range of 2-4 × 1011 eV−1 cm−2, indicating a good electronic quality of the obtained interfaces.Correlation among chemical, electronic and electrical properties of the GaN/GaAs interface was discussed. |
| Keywords: | Nitridation XPS Electrical measurements Photoluminescence |
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