Quantum states in fabricating poly-Si films |
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| Authors: | Ruimin Jin Jingxiao Lu Yu Ja Shie Yang Liwei Zhang |
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| Affiliation: | Key Laboratory of Material Physics of the Ministry of Education of China, Zhengzhou University, Zhengzhou, China 450052 |
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| Abstract: | The quantum states are presented in these processions of fabricating poly-Si films. Amorphous silicon films prepared by PECVD has been crystallized by conventional furnace annealing (FA) and rapid thermal annealing (RTA), respectively. It is found that the thin films grain size present quantum states with the increasing of the gas flow ratios of SiH4, H2 mixture, substrate temperatures, frequency power, annealing temperature and time. |
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| Keywords: | Quantum states PECVD Conventional furnace annealing Pulsed rapid thermal annealing Grain size |
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