Preparation and conducting performance of LaNiO3/Ag film and its interface reaction

LaNiO₃ thin film with perovskite structure was successfully prepared on Ag substrate via an amorphous heteronuclear complex LaNi(DTPA)·6H₂O as a precursor. The influences of precursor concentration and PEG additive with different molecular weight on the texture of the film were carefully studied. The interface states of LaNiO₃/Ag film were revealed by using AES analysis. The effect of annealing time on the interface diffusion of the LaNiO₃/Ag film was shown by using AES depth profile spectrum. The relationship between the electric resistivity of the film and the environmental temperature was measured by using four-probe method. The results showed the film had good metallic conductivity from 300 down to 77 K.