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Preparation and characterization of pulsed laser deposition (PLD) SiC films |
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| Authors: | Y.H. Tang T.-K. Sham D. Yang |
| Affiliation: | a Department of Chemistry, University of Western Ontario, London, Ontario, Canada, N6A 5B7 b Integrated Manufacturing Technologies Institute, National Research Council Canada, 800 Collip Circle, London, Ontario, Canada, N6G 4X8 |
| Abstract: | Si K-edge XAFS was used to characterize a stoichiometric SiC film prepared by pulsed KrF laser deposition. The film was deposited on a p-type Si(1 0 0) wafer at a substrate temperature of 250 °C in high vacuum with a laser fluence of ∼5 J/cm2. The results reveal that the film contains mainly a SiC phase with an amorphous structure in which the Si atoms are bonded to C atoms in its first shell similar to that of crystalline SiC powder but with significant disorder. |
| Keywords: | Pulsed laser deposition SiC film Si K-edge |
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