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Optical properties of Fe-doped silica films on Si |
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| Authors: | G.J. Babonas A. Reza I. Simkiene M. Baran U.O. Karlsson |
| Affiliation: | a Semiconductor Physics Institute, Gostauto 11, LT-01108 Vilnius, Lithuania b Vilnius Pedagogical University, LT-08106 Vilnius, Lithuania c Institute of Physics, PAN, PL 02 668 Warsaw, Poland d Department of Materials Physics, KTH, S-16440 Kista, Sweden |
| Abstract: | Optical properties of Fe-doped silica films on Si were investigated by ellipsometric technique in the region 1-5 eV. Samples were produced by sol-gel method. Precursors were prepared by mixing tetraethoxysilane (TEOS) solution in ethanol and water with aqueous solution of Fe-chloride or Fe-acetate. The coating solution was deposited on Si substrates by spin on technique. The size of Fe-containing nanometric-sized particles depended on technology and varied from 20 to 100 nm. Optical response of complex hybrid samples SiO2:Fe/Si was interpreted in a multi-layer model. In the inverse problem, the Maxwell equations were solved by transfer matrix technique. Dielectric function of Fe-doped silica layers was calculated in the model of effective media. Analysis of optical data has shown that various Fe-oxides formed. Experimental data for films obtained from precursors with Fe-acetate and annealed in hydrogen were well described by the model calculations taking into account a small contribution 1-5% of metal Fe imbedded in silica. The Fe/Fe-O contribution to optical response increased for samples grown from FeCl3-precursor. Ellipsometric data for Fe-doped silica films on Si were interpreted taking into account the structural AFM studies as well as the results of magnetic measurements. |
| Keywords: | 76.66.Sq 61.46.+n 68.37.Ps |
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