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Preparation of boron carbon nitride thin films by radio frequency magnetron sputtering |
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| Authors: | Lihua Liu Yuxin Wang Yingai Li Chunhong Zhao |
| Institution: | a National Key Laboratory of Superhard Materials, No. 10, Qian Wei Road, Jilin University, Changchun, Jilin 130012, China b College of Science, Changchun University of Science and Technology, Changchun 130022, China c College of Physics, Jilin Normal University, Jilin, Siping 136000, China |
| Abstract: | Boron carbon nitride films were deposited by radio frequency magnetron sputtering using a composite target consisting of h-BN and graphite in an Ar-N2 gas mixture. The samples were characterized by X-ray diffraction, Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. The results suggest that the films are atomic-level hybrids composed of B, C and N atoms. The boron carbon nitride films prepared in the present experiment have a disordered structure. The sputtering power varied from 80 W to 130 W. This sputtering power was shown to have regular effect on the composition of boron carbon nitride films. The samples deposited at 80 W and 130 W are close to the stoichiometry of BC3N. The sample deposited at 110 W is close to the stoichiometry of BCN. The samples deposited at 100 W and 120 W approach to BC2N. It is very significant for us to synthesize boron carbon nitride compound with controllable composition by changing the sputtering power. |
| Keywords: | Radio frequency magnetron sputtering Boron carbon nitride thin films |
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