Low-temperature MOVPE growth of ZnO thin films by using a buffer layer |
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| Authors: | W.Z. Xu L. Jiang Y.J. Zeng L.P. Zhu B.H. Zhao |
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| Affiliation: | State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China |
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| Abstract: | ZnO thin films have been grown on a-plane (1,1,−2,0) sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) at low substrate temperature of 350 °C. It is showed that the crystal and electrical quality of the thin films was improved by using a ZnO buffer layer. The photoluminescence (PL) measurements indicate that the ZnO thin films grown at such a low substrate temperature have a strong UV emission. |
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| Keywords: | 61.10.N 81.15.Kk 68.55 73.61.G 78.66.H |
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