Ellipsometric investigation of optical constant and energy band gap of Zn1−xMnxSe/GaAs (1 0 0) epilayers |
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Authors: | D.-J. Kim Y.D. Choi J.-W. Lee |
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Affiliation: | a Department of Optical & Electronic Physics, Mokwon University, 800, Doan-Dong, Seo-ku, , Daejeon 302-729, Republic of Korea b Department of Materials Engineering, Hanbat National University, Daejeon 305-719, Republic of Korea |
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Abstract: | Zn1−xMnxSe/GaAs (1 0 0) epilayers were grown using a hot-wall epitaxy method. The spectroscopic ellipsometry was used to determine the optical dielectric constant. The obtained pseudodielectric function spectra revealed the distinct structures at energies of E0, E0 + Δ0, E1, E1 + Δ1, E2 and + Δ0 critical points (CPs) at lower Mn composition range. These critical points were determined by analytical line-shapes fitted to numerically calculated derivatives of their pseudodielectric functions. The peak characteristics were changed with the change in Mn composition. The spectral dependence of pseudodielectric function 〈?〉 was used to obtain the fundamental energy gaps E0 including a unique relation with Mn composition. Also, the shifting and broadening of the CPs were observed with increasing Mn composition. |
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Keywords: | Hot-wall epitaxy ZnMnSe Spectroscopic ellipsometer Pseudodielectric constant |
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