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A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps |
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| Authors: | V.M. Aroutiounian G.A. Avetisyan P.G. Soukiassian Vaz.V. Buniatyan |
| Affiliation: | a Yerevan State University, Al. Manoukian Str. 1, 375025 Yerevan, Armenia b State Engineering University of Armenia, 105 Teryan Str., 375009 Yerevan, Armenia c Commissariat à l’Energie Atomique, Laboratoire Surfaces et Interfaces de Matériaux, Avancés associé à l’Université de Paris-Sud/Orsay, DSM-DRECAM-SPCSI, Bâtiment 462, Saclay, 91191 Gif sur Yvette Cedex, France |
| Abstract: | Noise characteristics of silicon carbide Schottky barrier field effect transistors (MESFET) are examined for the case of the operation in small-signal regime and the presence of deep impurity levels and electron traps in the band gap of the channel. A new model of calculations of noise is suggested. It is shown that the noise measure of the short channel MESFET can be decreased within certain high frequency range. |
| Keywords: | 85. 30.Tv 73. 50.Td |
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