Growth process of β-FeSi2 epitaxial film on Si(1 1 1) by molecular beam epitaxy |
| |
Authors: | S.Y. Ji J.F. Wang J.-W. Lim M. Isshiki |
| |
Affiliation: | Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan |
| |
Abstract: | We have reported a one step growth of a high quality β-FeSi2 epitaxial film on hydrogen terminated Si(1 1 1) by using molecular beam epitaxy (MBE) without template layer or post-growth annealing. In the present work, the growth process was studied by analyzing X-ray diffraction (XRD) spectra, reflective high energy electron diffraction (RHEED) and atomic force microscopy (AFM) observations on the samples grown with different growth times from 10 s to 1 h. A phase transformation from γ-FeSi2 to β-FeSi2 was confirmed existing in the crystal film growth, as well as the growth mode changing from three-dimensional (3D) to two-dimensional (2D) mode. |
| |
Keywords: | 68.55.&minus a 81.15.H 73.61.J |
本文献已被 ScienceDirect 等数据库收录! |