Temperature-dependent carbon incorporation into the Si1−yCy film during gas-source molecular beam epitaxy using monomethylsilane |
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| Authors: | A Konno K Senthil M Suemitsu |
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| Institution: | a Center for Interdisciplinary Research, Tohoku University, Aramaki Aza Aoba, Aoba-ku, Sendai 980-8578, Japan
b Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan |
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| Abstract: | Coverage and adsorption state of hydrogen atoms on the growing surface of Si1−yCy film using monomethylsilane has been investigated by using temperature-programmed desorption (TPD) and multiple-internal-reflection Fourier-transform infrared spectroscopy (MIR-FT-IR). The surface hydrogen coverage decreases with the growth temperature Tg until it disappears at 800 °C. All the H2-TPD spectra are well resolved into six SiH-related and one CHn-related hydrogen desorption peaks. The SiH-related FT-IR peak showed a blue shift with increasing Tg, which, in conjunction with the TPD, is related to enhanced C incorporation at backbonds of SiH. |
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| Keywords: | 68 43Vx 81 15Hi |
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