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Combinatorial exploration of flux material for Bi4Ti3O12 single crystal film growth |
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| Authors: | R Takahashi Y Yonezawa M Ohtani Y Matsumoto H Koinuma |
| Institution: | a Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8503, Japan b Fuji Electric Advanced Technology Co., Ltd., 4-18-4 Tsukama, Matsumoto, Nagano 390-0821, Japan c Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan d National Institute of Material Science, 1-1 Namiki, Tsukuba, Ibaraki, Japan e Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8503, Japan f CREST-Japan Science and Technology Corporation, 3-4-1 Nihonbashi Tyu-o-ku, Tokyo 103-0027, Japan |
| Abstract: | The combinatorial approach to materials synthesis was employed for the quick screening of a flux material for liquid phase-mediated epitaxy of Bi4Ti3O12 single crystal film. A series of ternary flux libraries composed of two self-fluxes (Bi2O3 and Bi4Ti3O12) and an impurity flux (VOx, WOx, CuOx, BiPOx, BaO, MoOx) were fabricated on the SrTiO3 (0 0 1) substrates. Then, stoichiometric Bi4Ti3O12 was grown on each one of these flux libraries at a temperature presumed to melt the flux. High-throughput characterization with the concurrent X-ray diffraction (XRD) method resulted in the discovery of a novel flux material, CuO, containing Bi2O3, for Bi4Ti3O12 single crystal film. |
| Keywords: | 81 15 Kk 68 55 61 66 F 77 84 |
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