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SIMS analysis of residual gas elements with a Cameca IMS-6f ion microprobe
Authors:Yu Kudriavtsev  A Villegas  A Godines  R Asomoza
Institution:Dep. Ingeneria Electrica—SEES, CINVESTAV-IPN, Av. IPN #2508, Col San Pedro Zacatenco, Mexico D.F. 07360, Mexico
Abstract:In this paper, we present experimental data for SIMS analysis of residual gas elements (RGEs) with a Cameca IMS-6f ion microprobe. We considered a simple experimental technique, which provides an effective separation of the secondary ions, sputtered from the bulk of a target, and from the molecules, adsorbed on the analyzed surface from the residual atmosphere. The technique needs the sputtering yield of one monolayer (ML) per second to be applied. The method improves (in more than one order of magnitude) the detection limit for RGEs in SIMS analysis, and simultaneously, provides information about the residual atmosphere at the sample surface and in the main chamber of the experimental instrument. The method provides a calibration method for an ion gauge, and can be used for SIMS analysis with a gas (O2) flooding.
Keywords:SIMS  Silicon  Residual atmosphere
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