Si layer transfer to InP substrate using low-temperature wafer bonding |
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Authors: | J Arokiaraj S Tripathy S Vicknesh SJ Chua |
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Institution: | Institute of Materials Research and Engineering, 3, Research Link, Singapore 117602, Singapore |
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Abstract: | Using a low-temperature wafer bonding process, InP substrates are bonded to silicon-on-insulator (SOI) substrates at 220 °C. A combination of oxygen plasma and chemical treatment results in a direct contact bonding at room temperature. After the bonding process at 220 °C for 45 min, removal of the Si handle substrate by sacrificial etching of the buried oxide layer in SOI, results in a thin membrane of Si robustly bonded to InP. The thin Si membrane bonded to InP shows uniformly bonded interface under high-resolution electron microscopy. Micro-Raman analysis has also been carried out to study the bonded interface. I-V characteristics of the bonded structures suggest that such bonding and layer transfer processes are suitable for device integration. |
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Keywords: | 81 05Ea 81 65&minus b 78 55&minus m 78 30&minus j |
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