Fabrication of Al nanoparticles and their electrical properties studied by capacitance-voltage measurements |
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Authors: | T Noda T Mano N Koguchi |
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Institution: | Nanomaterials Laboratory, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0003, Japan |
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Abstract: | Nanometer-scale Al particles are fabricated and are embedded in a GaAs matrix using molecular beam epitaxial technique. The Al particle is self-assembled on GaAs by supplying an Al molecular beam. The average particle size is found to be 25 nm. The density is 7 × 1010 cm−2 when Al of 6.2 × 1015 atoms/cm2 is supplied on (1 0 0)GaAs at a substrate temperature of 300 °C. Clear hysteresis and plateaus in capacitance-voltage (C-V) curves are found in an Al-embedded sample, whereas monotonic increase of capacitance is obtained in a reference sample having an AlAs layer instead of Al. This difference results from trapping of electrons by the Al particles, suggesting that the particles have metallic character. |
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Keywords: | 73 22 -f 73 63 -b |
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