A technique for positron spectroscopy of monovacancies formed by low-temperature ion implantation of silicon |
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| Authors: | R.E. Mason |
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| Affiliation: | Department of Physics, University of Bath, Bath BA2 7AY, UK |
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| Abstract: | A system for positron beam-based Doppler broadening spectroscopy of the formation and evolution of monovacancy defects in silicon is described. The apparatus allows in situ ion implantation at low temperatures (∼50 K) followed by positron beam assay. First measurements for 6 keV He implantation, at post-implant temperatures between 60 and 300 K are presented. Benefits and drawbacks of this system are discussed. |
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| Keywords: | Monovacancies Ion implantation Positron beams |
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