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Growth of boron nano-junctions
Authors:SH Yun  A Dibos  JZ Wu
Institution:a Department of Microelectronics and Information Technology, Royal Institute of Technology, Kista SE-16440, Sweden
b Department of Physics and Astronomy, University of Kansas, Lawrence, KS 66045, USA
Abstract:In this work, we demonstrate the synthesis of various types of boron nanowire junctions in a self-assembled manner by simple closed-tube thermal vapor transfer method. The Y-type boron nano-junctions and lateral boron-silicon alloy nano-junctions were grown on Si substrates, based on the oxide assisted VLS growth mode at a relatively low processing temperature regime and the VLS growth mode at the high processing temperature regime, respectively.
Keywords:81  05  Cy  81  16  &minus  C  81  16  Be
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