Growth of boron nano-junctions |
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Authors: | SH Yun A Dibos JZ Wu |
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Institution: | a Department of Microelectronics and Information Technology, Royal Institute of Technology, Kista SE-16440, Sweden b Department of Physics and Astronomy, University of Kansas, Lawrence, KS 66045, USA |
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Abstract: | In this work, we demonstrate the synthesis of various types of boron nanowire junctions in a self-assembled manner by simple closed-tube thermal vapor transfer method. The Y-type boron nano-junctions and lateral boron-silicon alloy nano-junctions were grown on Si substrates, based on the oxide assisted VLS growth mode at a relatively low processing temperature regime and the VLS growth mode at the high processing temperature regime, respectively. |
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Keywords: | 81 05 Cy 81 16 &minus C 81 16 Be |
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