Use of successive ionic layer adsorption and reaction (SILAR) method for amorphous titanium dioxide thin films growth |
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| Authors: | SS Kale Hoeil Chung CD Lokhande |
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| Institution: | a Inorganic Nano-Materials Laboratory, Department of Chemistry, Hanyang University, Sungdong-Ku, Haengdang-Dong 17, Seoul 133-791, Republic of Korea
b Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, Maharashtra, India |
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| Abstract: | Use of successive ionic layer adsorption and reaction (SILAR) method was preferred for the growth of amorphous titanium dioxide (TiO2) thin films at ambient temperature. Further, these films were annealed at 673 K for 2 h in air for structural improvement and characterized for structural, surface morphological, optical and electrical properties. An amorphous structure of TiO2 was retained even after annealing as confirmed from XRD studies. The spherical grains of relatively large size were compressed after annealing. A red shift in band gap energy and decrease in electrical resistivity were observed due to annealing treatment. |
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| Keywords: | Titanium dioxide SILAR XRD SEM UV-vis Electrical resistivity |
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