Photoluminescence activity of Yang and Secco etched multicrystalline silicon material |
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Authors: | D Bouhafs M Fathi |
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Institution: | a L.C.P./U.D.T.S., 2 Bd. Frantz Fanon, B.P. 399, Alger-Gare, Algiers, Algeria b Centre de Recherche Nucléaire d’Alger, 2 Bd. Frantz Fanon, B.P. 399, Alger-Gare, Algiers, Algeria |
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Abstract: | Ultraviolet and blue-green photoluminescence (PL) was investigated on multicrystalline silicon (mc-Si) samples chemically etched by Secco and Yang solutions. The samples were characterized by dislocation density (105-106 cm−2). The form of etched pits is triangular with Yang etch and like a honeycomb with Secco etch as observed with a scanning electron microscope (SEM). These textures of mc-Si wafers give a PL activity similar to that obtained with nanostructures of porous silicon (PS) as reported in the literature. The ultraviolet PL spectra observed with Yang etch shift to the blue-green spectrum range when applying Secco etch. In our experiments we have observed 3-5 μm diameter macro pores separated by a high density of nanowalls. These observations suggest that the origin of the PL activity are quantum dots resulting from the silicon nanocrystallites obtained after few minutes of chemical etching. |
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Keywords: | Crystalline defects Photoluminescence Nanocrystals Mc-Si |
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