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High resolution hard X-ray photoemission using synchrotron radiation as an essential tool for characterization of thin solid films |
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| Authors: | JJ Kim E Ikenaga A Takeuchi H Makino A Yamamoto D Miwa T Yamamoto K Kobayashi |
| Institution: | a JASRI/SPring-8 Kouto 1-1-1, Mikazuki-cho, Sayo-gun, Hyogo 679-5198, Japan b Materials Design Center, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami-gun, Kochi 782-8502, Japan c Institute for Materials Research, Tohoku University, Katahira, Aoba-ku, Sendai 980-8577, Japan d Center for Interdisciplinary Research, Tohoku University, Aramaki, Aoba-ku, Sendai 980-8578, Japan e Department of Electrical & Electronics Engineering, Faculty of Engineering, Fukui University, Bunkyo 3-9-1, Fukui 910-8507, Japan f RIKEN/SPring-8 Kouto 1-1-1, Mikazuki-cho, Sayo-gun, Hyogo 679-5198, Japan |
| Abstract: | Recently, we have shown that hard X-ray photoemission spectroscopy using undulator X-rays at SPring-8 is quite feasible with both high resolution and high throughput. Here we report an application of hard X-ray photoemission spectroscopy to the characterization of electronic and chemical states of thin solid films, for which conventional PES is not applicable. As a typical example, we focus on the problem of the scatter in the reported band-gap values for InN. We show that oxygen incorporation into the InN film strongly modifies the valence and plays a crucial role in the band gap problem. The present results demonstrate the powerful applicability of high resolution photoemission spectroscopy with hard X-rays from a synchrotron source. |
| Keywords: | 79 60 Bm 71 55 Eq |
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