Study of the interface formed between poly(2-methoxy-5-(2′-ethyl-hexyloxyl)-p-phenylene vinylene) and indium tin oxide in top emission organic light emitting diodes |
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Authors: | TP Nguyen J Ip CH Huang J Herrero |
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Institution: | a Laboratoire de Physique des Matériaux et Nanostructures, Institut des Matériaux Jean Rouxel, 2 rue de la Houssinère, 44322 Nantes Cedex 3, France b Departamento de Energía (CIEMAT), Avda. Complutense 22, Madrid 28040, Spain |
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Abstract: | X-ray photoelectron spectroscopy (XPS) technique have been used to investigate the interface formed between poly(2-methoxy-5-(2′-ethyl-hexyloxyl)-p-phenylene vinylene) (MEH-PPV) and indium tin oxide (ITO) layer in top emission organic light emitting diodes. A weak but noticeable diffusion of indium into the polymer film was observed. Interactions between the diffused metallic atoms with the polymer resulted in the formation of carbon-metal complexes at the interface region. Compared to the ITO/MEH-PPV interface, the penetration of indium into the polymer layer was less important and may be explained by the surface morphology of the polymer film. It was however, a probable factor for fast degradation of devices using this structure. |
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Keywords: | 68 35 Fx 68 47 Mn 79 60 Fr |
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