Near-edge X-ray absorption fine-structure studies of GaN under low-energy nitrogen ion bombardment |
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Authors: | VA Coleman M Petravi? B Kim |
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Institution: | a Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia b Department of Physics and Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang, Kyungbuk 790-784, Korea c ShenZhen Fangda GuoKe Optronics Technical Co. Ltd., Fang Da Town, Longjing, Xili, Nanshan, ShenZhen 518055, China |
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Abstract: | The electronic structure of p-type GaN layers exposed to low-energy nitrogen ion bombardment was studied by near-edge X-ray absorption fine-structure (NEXAFS) spectroscopy. It was found that ion bombardment lead to the creation of states lying below the nitrogen absorption edge which posses p-symmetry. These states are attributed to nitrogen interstitials with different local topologies created during ion bombardment. Furthermore, the NEXAFS spectra also shows the development of a strong -resonance above the absorption edge with increasing incident nitrogen ion energy. This peak is attributed to the formation of molecular nitrogen at interstitial positions, arising from a build up of nitrogen ions on these sites. |
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Keywords: | 78 70 Dm 73 20 Hb 68 47 Fg 79 20 Rf |
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