Optical band gap of zinc nitride films prepared on quartz substrates from a zinc nitride target by reactive rf magnetron sputtering |
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Authors: | Fujian Zong Honglei Ma Jin Ma Hongdi Xiao Chengshan Xue |
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Institution: | a School of Physics and Microelectronics, Shandong University, Jinan 250100, China b Institute of Semiconductor, Shandong Normal University, Jinan 250014, China |
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Abstract: | Polycrystalline zinc nitride films have been synthesized onto quartz substrates from the zinc nitride target and the nitrogen working gas by reactive rf magnetron sputtering at room temperature. X-ray diffraction study indicates that polycrystalline zinc nitride films are of cubic structure with the lattice constant a = 0.979(1) nm and have preferred orientations with (3 2 1) and (4 4 2). Its absorption coefficients as well as the film thickness are calculated from the transmission spectra, which are measured with a double beam spectrophotometer. The optical band gap has been determined from the photon energy dependence of absorption coefficient, an indirect transition optical band gap of 2.12(3) eV has been obtained. |
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Keywords: | 78 20 -e 78 40 -q 61 10 Nz 71 35 Cc 81 15 Cd |
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