The study on the surface state of CdZnTe (1 1 0) surface |
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| Authors: | Gangqiang Zha Wanqi Jie Dongmei Zeng Xuxu Bai Wenhua Zhang |
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| Affiliation: | a State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
b National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China |
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| Abstract: | Angle-resolved photoemission spectroscopy (ARPES) was used to characterize the surface state of clean CdZnTe (1 1 0) surface. The surface state of CdZnTe with the peak at 0.9 eV below the Fermi level is identified. Meanwhile, Photoluminescence (PL) spectrum confirmed that there existed a surface trap state which introduced a deep-level peak at 1.510 eV. The surface trap states can be decreased by aging in dry-air. The surface leakage current was measured also by I-V measurements. After aging, the leakage current was decreased remarkably, which suggested that the aging treatment is an effective method to decrease the surface trap state. |
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| Keywords: | CdZnTe crystal Surface state Aging ARPES PL I-V measurement |
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