Spin-injection efficiency and magnetoresistance in a hybrid ferromagnetic-semiconductor trilayer with interfacial barriers

We present a self-consistent model of spin transport in a ferromagnetic (FM)-semiconductor (SC)-FM trilayer structure with interfacial barriers at the FM-SC boundaries. The SC layer consists of a highly doped n²⁺ AlGaAs-GaAs 2DEG while the interfacial resistance is modeled as delta potential (δ) barriers. The self-consistent scheme combines a ballistic model of spin-dependent transmission across the δ-barriers, and a drift-diffusion model within the bulk of the trilayer. The interfacial resistance (R_I) values of the two junctions were found to be asymmetric despite the symmetry of the trilayer structure. Transport characteristics such as the asymmetry in R_I, spin-injection efficiency and magnetoresistance (MR) are calculated as a function of bulk conductivity σ_s and spin-diffusion length (SDL) within the SC layer. In general a large σ_s tends to improve all three characteristics, while a long SDL improves the MR ratio but reduces the spin-injection efficiency. These trends may be explained in terms of conductivity mismatch and spin accumulation either at the interfacial zones or within the bulk of the SC layer.