Fabrication and electrical characterization of nanocrystalline ZnO/Si heterojunctions |
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Authors: | Yang Zhang Sheng Zhong Cihui Liu Ziyu Zhang |
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Affiliation: | Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, PR China |
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Abstract: | Nanocrystalline zinc oxide (nc-ZnO) films were prepared by a sol-gel process on p-type single-crystalline Si substrates to fabricate nc-ZnO/p-Si heterojunctions. The structure and morphology of ZnO films on Si substrates, which were analyzed by X-ray diffraction (XRD) spectroscopy and atomic force microscopy (AFM), showed that ZnO films consisted of 50-100 nm polycrystalline nanograins with hexagonal wurtzite structure. The electrical transport properties of the nc-ZnO/p-Si heterojunctions were investigated by temperature-dependent current-voltage (I-V) measurements and room temperature capacitance-voltage measurements. The temperature-dependent I-V characteristics revealed that the forward conduction was determined by multi-step tunneling current, and the activation energy of saturation current was about 0.26 eV. The 1/C2-V plots indicated the junction was abrupt and the junction built-in potential was 1.49 V at room temperature. |
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Keywords: | ZnO Sol-gel Nanostructure Heterojunction Tunneling |
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