Flattening of micro-structured Si surfaces by hydrogen annealing |
| |
Authors: | Reiko Hiruta Hitoshi Kuribayashi Koichi Sudoh |
| |
Affiliation: | a Device Technology Laboratory, Fuji Electric Advanced Technology Co. Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan b Material and Science Laboratory, Fuji Electric Advanced Technology Co. Ltd., 1 Fuji-machi, Hino, Tokyo 191-8502, Japan c The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan |
| |
Abstract: | We report atomic scale flattening of surfaces of microstructures formed on Si wafers by furnace annealing. To avoid thermal deformation of the fabricated structures, advantage was taken of hydrogen annealing, which enables us to decrease the relaxation rate of Si surfaces due to surface hydrogenation. We examined cross-sectional shape and sidewall morphology of 3 μm deep trenches on Si(0 0 1) substrates after annealing at 1000 °C under various H2 pressures of 40-760 Torr. We successfully formed Si trenches with flat surfaces composed of terraces and steps while preserving the designed trench profile by increasing H2 pressure to 760 Torr. |
| |
Keywords: | 68.35.Bs 68.37.Ps |
本文献已被 ScienceDirect 等数据库收录! |
|