Effect of buffer layer on VOx film fabrication by reactive RF sputtering |
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Authors: | H Miyazaki I Yasui |
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Institution: | a Department of Material Science, Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu-cho, Matsue, Shimane 690-8504, Japan b United Nations University, 5-53-70 Jingumae, Shibuya, Tokyo 150-8925, Japan |
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Abstract: | Vanadium oxide VOx films were fabricated by RF magnetron sputtering on various metal buffer layers or silica glass substrates at a substrate temperature of 400 °C. V2O5 film was fabricated on a silica glass substrate, and VO2 films were fabricated on V, W, Fe, Ni, Ti, and Pt metal buffer layers. The transition temperature of the sample on the V buffer layer was 68 °C and that on the W buffer layer was 53 °C. The VO2 film was also fabricated on the V buffer layer by non-reactive sputtering using a V2O5 target at a substrate temperature of 400 °C. |
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Keywords: | Sputtering Buffer layer Vanadium dioxide Thermochromism |
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