Influence of buffer layer thickness on the structure and optical properties of ZnO thin films |
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Authors: | Ruijin Hong Jianda Shao Zhengxiu Fan |
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Affiliation: | a Research and Development Center for Optical Thin Film Coatings, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China b Graduate School of Chinese Academy of Sciences, Beijing 100864, China |
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Abstract: | A series of ZnO thin films were deposited on ZnO buffer layers by DC reactive magnetron sputtering. The buffer layer thickness determination of microstructure and optical properties of ZnO films was investigated by X-ray diffraction (XRD), photoluminescence (PL), optical transmittance and absorption measurements. XRD results revealed that the stress of ZnO thin films varied with the buffer layer thickness. With the increase of buffer layer thickness, the band gap edge shifted toward longer wavelength. The near-band-edge (NBE) emission intensity of ZnO films deposited on ZnO buffer layer also varied with the increase of thickness due to the spatial confinement increasing the Coulomb interaction between electrons and holes. The PL measurement showed that the optimum thickness of the ZnO buffer layer was around 12 nm. |
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Keywords: | Zinc Oxide Sputtering Structure Photoluminescence |
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