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Low cost wavelength filter of SiGe photodetector with a-Si:H capped layer |
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| Authors: | JD Hwang WT Chang KH Hseih JC Liu |
| Institution: | a Department of Electrical Engineering, Da-Yeh University, Da-Tsuen, Changhua, Taiwan, ROC b Department of Materials Science and Engineering, Ming Hsin University of Science and Technology, Hsinchu, Taiwan, ROC c Materials Research Laboratories, ITRI, Hsinchu, Taiwan, ROC |
| Abstract: | The strained Si0.8Ge0.2 film has been prepared onto Si substrate by using an ultrahigh-vacuum chemical vapor deposition system. A low cost wavelength filter of photodetector has been demonstrated for the first time. This filter was simply carried out by just inserting a 60 nm thick a-Si:H capped layer onto Si0.8Ge0.2 thin film. The room-temperature photoluminescence shows that the sample with Si0.8Ge0.2 layer has a tendency to shift wavelength into longer regime than that of Si substrate. The full width at half maximum (FWHM) was 185 nm for Si0.8Ge0.2 photodetector without a-Si:H capped. By inserting a 60 nm thick a-Si:H capped layer, the FWHM was narrowed into 97 nm. This demonstrates that the a-Si:H capped layer has an ability acted as wavelength filter in our study. |
| Keywords: | 85 30 85 60 85 60G |
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