A simple photochemical method to synthesize Ga2O3-Dy-M thin films and their evaluation as optical materials (where M=Cr or Co) |
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Authors: | G. Cabello L. Lillo F. Cabrera B. Chornick |
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Affiliation: | a Departamento de Ciencias Básicas, Facultad de Ciencias, Universidad del Bío-Bío, Chillán, Chile b Instituto de Química, Pontificia Universidad Católica de Valparaíso, Valparaíso, Chile c Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Casilla 487-3, Santiago 8370415, Chile |
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Abstract: | We report the photochemical method to synthesize Ga2O3-Dy3+-Co3+ and Ga2O3-Dy3+-Cr3+ thin films. X-ray photoelectron spectroscopy, X-ray diffraction and photoluminescence were used to characterize the products. These analyses revealed that as-deposited and annealed films are amorphous. The optical characterization of the films showed that these are highly transparent in the visible spectrum but decrease significantly with doped and co-doped films. Under the excitation of UV light (254 nm) the doped films (Ga2O3-Dy3+) show the characteristic emissions of Dy3+ at 500, 575, 594, 605 and 652 nm corresponding to 4F9/2→6HJ ( J=15/2, 13/2 and 11/2) transitions but the emissions decrease with the co-doped films (Ga2O3-Dy3+-M3+, where M=Cr or Co); a possible emission mechanism and energy transfer have been proposed. |
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Keywords: | A. Amorphous materials D. Optical properties D. Luminescence |
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