Phase evolution and microwave dielectric properties of Bi3SbO7 ceramic |
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| Authors: | Li-Xia Pang Di Zhou Ying Wu Yue-Hua Chen |
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| Institution: | a Laboratory of Thin Film Techniques and Optical Test, Xi'an Technological University, No. 4, Jin Hua North Road, Xi'an 710032, China
b Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi'an Jiaotong University, Xi'an 710049, China |
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| Abstract: | The Bi3SbO7 ceramic was prepared by the solid state reaction method and its phase evolution at different temperatures was studied. Low temperature phase α-Bi3SbO7 was formed at about 890 °C and it started to transform to high temperature phase β-Bi3SbO7 at about 960 °C. Microwave dielectric constants of α-Bi3SbO7 ceramic and β-Bi3SbO7 ceramic were 43.2 and 37.6, Qf value were 2080 and 5080 GHz, respectively. TCF of α-Bi3SbO7 ceramic was near zero and TCF of β-Bi3SbO7 ceramic was about −120 ppm/°C. The Bi3SbO7 ceramic is a promising candidate for low temperature co-fired ceramic (LTCC) technology due to its large dielectric constant, low dielectric loss at microwave region, low sintering temperature and simple composition. |
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| Keywords: | A Ceramics A Electronic materials C X-ray diffraction D Dielectric properties D Phase transitions |
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